Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate

  • Guo, Xueqi
  • Zeng, Yuheng
  • Zhang, Zhi
  • Huang, Yuqing
  • Liao, Mingdun
  • Yang, Qing
  • Wang, Zhixue
  • Du, Minyong
  • Guan, Denggao
  • Yan, Baojie
  • Ye, Jichun
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Publication date
July 2019
Publisher
ELSEVIER SCIENCE BV

Abstract

The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of similar to 0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V-bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the ch...

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