The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of similar to 0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V-bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the ch...
Thermally grown oxide on poly silicon has poorer insulator properties than an oxide grown on single ...
International audiencePassivating the contacts of crystalline silicon (c-Si) solar cells (SC) with a...
International audiencePassivating contacts are becoming a mainstream option in current photovoltaic ...
The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-...
This work presents a systematic analysis of the transport mechanism and surface passivation of tunne...
International audiencePolysilicon (poly-Si) based passivating contacts are promising to improve sili...
We present a systematic study of highly boron (B)-doped poly-silicon (p(+)-poly-Si) and ultrathin si...
In this study, boron-doped passivating contacts are investigated. The focus of this study lies on co...
A comparison study of ultrathin atomic layer deposited AlOx, wet-chemically oxidized SiOx, and their...
Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to t...
Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or pol...
Recently, the charge carrier transport mechanism of passivating contacts, which feature an ultra-thi...
It is shown that layers of polysilicon doped with oxygen (polydox) can be used for the passivation o...
Thermally grown oxide on poly silicon has poorer insulator properties than an oxide grown on single ...
International audiencePassivating the contacts of crystalline silicon (c-Si) solar cells (SC) with a...
International audiencePassivating contacts are becoming a mainstream option in current photovoltaic ...
The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-...
This work presents a systematic analysis of the transport mechanism and surface passivation of tunne...
International audiencePolysilicon (poly-Si) based passivating contacts are promising to improve sili...
We present a systematic study of highly boron (B)-doped poly-silicon (p(+)-poly-Si) and ultrathin si...
In this study, boron-doped passivating contacts are investigated. The focus of this study lies on co...
A comparison study of ultrathin atomic layer deposited AlOx, wet-chemically oxidized SiOx, and their...
Passivating contacts based on poly-Si have enabled record-high c-Si solar cell efficiencies due to t...
Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or pol...
Recently, the charge carrier transport mechanism of passivating contacts, which feature an ultra-thi...
It is shown that layers of polysilicon doped with oxygen (polydox) can be used for the passivation o...
Thermally grown oxide on poly silicon has poorer insulator properties than an oxide grown on single ...
International audiencePassivating the contacts of crystalline silicon (c-Si) solar cells (SC) with a...
International audiencePassivating contacts are becoming a mainstream option in current photovoltaic ...