Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

  • BRIMONT, Christelle
  • DOYENNETTE, Laetitia
  • Tabataba-vakili, Farsane
  • Roland, I.
  • El Kurdi, M.
  • Checoury, X.
  • Sauvage, S.
  • Paulillo, B
  • Colombelli, R
  • RENNESSON, S.
  • Frayssinet, Eric
  • Brault, Julien
  • Damilano, B.
  • Duboz, J. y.
  • Semond, F.
  • Gayral, B.
  • Boucaud, P.
  • GUILLET, Thierry
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Publication date
November 2018
Publisher
HAL CCSD

Abstract

International audienceThe integration of nitride semiconductors on a silicon platform is a very promising field for nanophotonic applications in the UV-blue spectral range. Efficient sources are a main topic that can be achieved by compact microlasers based on GaN/AlN and InGaN/GaN multiple quantum wells (MQW) grown on a silicon substrate. The epitaxy of these structures is performed by the controlled-growth of an AlN and GaN buffer layers to prevent from dislocations. To obtain versatile and efficient micro-emitters, the technological development of micro-resonator has been improved for nitride MQW micro-disks on silicon. This unique Nitride-on-Silicon platform has been allowed by releasing the micro-disk membrane with selective under-etch...

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