International audienceThe integration of nitride semiconductors on a silicon platform is a very promising field for nanophotonic applications in the UV-blue spectral range. Efficient sources are a main topic that can be achieved by compact microlasers based on GaN/AlN and InGaN/GaN multiple quantum wells (MQW) grown on a silicon substrate. The epitaxy of these structures is performed by the controlled-growth of an AlN and GaN buffer layers to prevent from dislocations. To obtain versatile and efficient micro-emitters, the technological development of micro-resonator has been improved for nitride MQW micro-disks on silicon. This unique Nitride-on-Silicon platform has been allowed by releasing the micro-disk membrane with selective under-etch...