Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.Includes bibliographical references (p. 119-121).by James Chingwei Li.M.Eng
Our study involves the design, fabrication, and characterization of the basic depletion mode MOSFET ...
The success of the microelectronics industry over more then 30 years is to a large extent based on u...
Leakage current reduction is of primary importance as the technology scaling trends continue towards...
Polysilicon gate depletion is an important eect that degrades the circuit performance of deep submic...
Ion implantation, followed by annealing process, often leads to nonuniform doping and considerable d...
This paper presents the study of the polysilicon gate depletion effect (PDE) on the threshold voltag...
Ion implantation. followed by annealing process, often leads to nonuniform doping and considerable d...
An explicit surface potential model of the bulk-MOSFET with inclusion of the poly-gate accumulation,...
An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, ...
An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, ...
An explicit surface potential model of the bulk-MOSFET with inclusion of the poly-gate accumulation,...
This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitan...
[[abstract]]Poly-Si0.8Ge0.2 and poly-Si gate n-channel metal oxide semiconductor capacitors with ver...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
Our study involves the design, fabrication, and characterization of the basic depletion mode MOSFET ...
The success of the microelectronics industry over more then 30 years is to a large extent based on u...
Leakage current reduction is of primary importance as the technology scaling trends continue towards...
Polysilicon gate depletion is an important eect that degrades the circuit performance of deep submic...
Ion implantation, followed by annealing process, often leads to nonuniform doping and considerable d...
This paper presents the study of the polysilicon gate depletion effect (PDE) on the threshold voltag...
Ion implantation. followed by annealing process, often leads to nonuniform doping and considerable d...
An explicit surface potential model of the bulk-MOSFET with inclusion of the poly-gate accumulation,...
An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, ...
An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, ...
An explicit surface potential model of the bulk-MOSFET with inclusion of the poly-gate accumulation,...
This paper tackles the difficult task to extract MOS parameters by a new model of the gate capacitan...
[[abstract]]Poly-Si0.8Ge0.2 and poly-Si gate n-channel metal oxide semiconductor capacitors with ver...
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
published_or_final_versionElectrical and Electronic EngineeringDoctoralDoctor of Philosoph
Our study involves the design, fabrication, and characterization of the basic depletion mode MOSFET ...
The success of the microelectronics industry over more then 30 years is to a large extent based on u...
Leakage current reduction is of primary importance as the technology scaling trends continue towards...