A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference

A novel sensing algorithm for non-volatile Spin-Transfer Torque Magneto-resistive Random Access Memory (STT-MRAM) is presented. The dynamic reference sense amplifier (DRSA) improves sensing margin to achieve high reliability and sensitivity by increasing the difference of input voltages of sense amplifier. A dynamic reference sensing algorithm is proposed as a solution for the read margin loss due to variation in magnetic tunneling junction (MTJ) parameters of the STT-MRAM. The proposed sensing method was designed in standard 0.18 um process parameters, and simulation results indicate simultaneously increased the read margin compared with the conventional sensing method.This work was supported by the IT R&D program of MKE/KEIT. [KI002189, Technology Development of 30 nm level High Density Perpendicular STT-MRAM