A study on the impact of processing parameters on low-voltage power MOSFET
- Nur Aqilah, Othman
View in ORKGAbstract
Power MOSFET is the most commonly used power device due to its low gate drive power and fast switching speed compared to the existing power biplar transistor.It features a vertical structure with source and drain on opposite sides of the wafer to support higher current and voltage.The performance of power MOSFET is restricted by the internal resistance. A careful optimisation of the gate width (W G ) is required to minimise the internal resistance.Moreover, the doping concentration of N-epitaxial drift region and its thickness are chosen to obtain the desired breakdown voltage. In the device designed to support low voltage (<50 V), the doping concentration of the P-base region is comparable with the doping concentration of the N-drift regio...