To break through 1-D layout limitations, we develop a computationally efficient random 2-D layout decomposition and synthesis technique which combines the optical and self-aligned multiple patterning processes. A polynomial time algorithm is developed to decompose the target layout into two components, each containing one or multiple sets of unidirectional patterns that can be formed by a self-aligned multiple patterning and cut processes. With no need of vias, the final random 2-D patterns are formed by directly stitching two components together. The advantages of this novel patterning approach include 2-D design freedom, multiple-pitch/CD capability, and significant reduction of cut/via steps. The developed decomposition and synthesis alg...
In double patterning lithography (DPL) layout decomposition for 45nm and below process nodes, two fe...
In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lith...
In this paper, we present a benchmarking study of directed self-assembly (DSA) and self-aligned mult...
To break through 1-D IC layout limitations, we develop computationally efficient 2-D layout decompos...
In this paper, a stitch database is built from various identified stitching structures in an open-ce...
Abstract—The use of multiple-patterning optical lithography for sub-20nm technologies has become ine...
Self-aligned quadruple patterning (SAQP) process is a proven technique for deep nano-scale IC manufa...
In this paper, a stitch database is built from various identified stitching structures in an open-ce...
Abstract—Double patterning lithography (DPL) is considered as a most likely solution for 32 nm/22 nm...
A hybrid self-aligned triple and negative-tone double patterning (HTDP) technique is proposed to ach...
Self-aligned multiple patterning (SAMP) is a promising technology to scale IC devices to 7-nm half p...
158 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.A new approach is introduced ...
As Double Patterning Lithography(DPL) becomes the lead-ing candidate for sub-30nm lithography proces...
To overcome the prohibitive barriers of edge-placement errors (EPE) in the cut/block step of complem...
In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process...
In double patterning lithography (DPL) layout decomposition for 45nm and below process nodes, two fe...
In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lith...
In this paper, we present a benchmarking study of directed self-assembly (DSA) and self-aligned mult...
To break through 1-D IC layout limitations, we develop computationally efficient 2-D layout decompos...
In this paper, a stitch database is built from various identified stitching structures in an open-ce...
Abstract—The use of multiple-patterning optical lithography for sub-20nm technologies has become ine...
Self-aligned quadruple patterning (SAQP) process is a proven technique for deep nano-scale IC manufa...
In this paper, a stitch database is built from various identified stitching structures in an open-ce...
Abstract—Double patterning lithography (DPL) is considered as a most likely solution for 32 nm/22 nm...
A hybrid self-aligned triple and negative-tone double patterning (HTDP) technique is proposed to ach...
Self-aligned multiple patterning (SAMP) is a promising technology to scale IC devices to 7-nm half p...
158 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.A new approach is introduced ...
As Double Patterning Lithography(DPL) becomes the lead-ing candidate for sub-30nm lithography proces...
To overcome the prohibitive barriers of edge-placement errors (EPE) in the cut/block step of complem...
In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process...
In double patterning lithography (DPL) layout decomposition for 45nm and below process nodes, two fe...
In circuit manufacturing, as the technology nodes keep shrinking, conventional 193 nm immersion lith...
In this paper, we present a benchmarking study of directed self-assembly (DSA) and self-aligned mult...