The oxidation process in the Si/SiO2 interface is very important in fabrication of semiconductor devices and as a reference in basic researches of various oxidations. As the oxidation proceeds, stress is accumulated in th
In the thermal oxidation reaction of Si, point defects (emitted Si atoms and its vacancies) occur ow...
This work provided an analytical model to solve the coupled mechanical-oxidation problem during the ...
Since the 1960's many adaptations to the linear parabolic model for silicon oxidation have been prop...
International audienceWe compare here the different oxidization protocols that can be used to genera...
Using density functional calculations in the generalized gradient approximation, the energetics of c...
International audienceA kinetic Monte Carlo study of the early stage of silicon oxidation is present...
To improve the understanding of the microscopic properties of the silicon oxidation process, we perf...
The fabrication of microelectronic structures and devices vitally depends on the thermal oxidation f...
International audienceThe SiO2/Si interface is still a crucial issue in silicon-based nanotechnology...
A multi-scale approach connecting the atomistic process simulations to the device-level simulations ...
International audienceWe present a synthetic review of elementary chemical mechanisms source of the ...
An atomic-scale description is provided for the long-range oxygen migration through the disordered S...
This study presents an atomic level of molecular dynamic simulation of oxidation of silicon nanopart...
The nucleation-initiated oxidation of a Si surface at very low temperatures in plasmas is demonstrat...
We investigated the oxidation reaction of the O2 molecule at the Si(100)-SiO2 interface by using a c...
In the thermal oxidation reaction of Si, point defects (emitted Si atoms and its vacancies) occur ow...
This work provided an analytical model to solve the coupled mechanical-oxidation problem during the ...
Since the 1960's many adaptations to the linear parabolic model for silicon oxidation have been prop...
International audienceWe compare here the different oxidization protocols that can be used to genera...
Using density functional calculations in the generalized gradient approximation, the energetics of c...
International audienceA kinetic Monte Carlo study of the early stage of silicon oxidation is present...
To improve the understanding of the microscopic properties of the silicon oxidation process, we perf...
The fabrication of microelectronic structures and devices vitally depends on the thermal oxidation f...
International audienceThe SiO2/Si interface is still a crucial issue in silicon-based nanotechnology...
A multi-scale approach connecting the atomistic process simulations to the device-level simulations ...
International audienceWe present a synthetic review of elementary chemical mechanisms source of the ...
An atomic-scale description is provided for the long-range oxygen migration through the disordered S...
This study presents an atomic level of molecular dynamic simulation of oxidation of silicon nanopart...
The nucleation-initiated oxidation of a Si surface at very low temperatures in plasmas is demonstrat...
We investigated the oxidation reaction of the O2 molecule at the Si(100)-SiO2 interface by using a c...
In the thermal oxidation reaction of Si, point defects (emitted Si atoms and its vacancies) occur ow...
This work provided an analytical model to solve the coupled mechanical-oxidation problem during the ...
Since the 1960's many adaptations to the linear parabolic model for silicon oxidation have been prop...
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