PERFORMANCE ANALYSIS OF FULLY DEPLETED DUAL MATERIAL GATE (DMG) SOI MOSFET AT 25NM TECHNOLOGY

The emergence of CMOS technology in the semiconductor industry is predominant. However, there is degradation of MOSFET characteristics as the technology is scaled down to nanometer regime. In this paper, Dual Material Gate MOSFET is analyzed to study the performance characteristics like DIBL, Subthreshold Slope and Ion/Ioff ratio using TCAD simulation. We observed that the DMG MOSFET is effective in reducing DIBL. Also, by using HfO2 as spacer, we obtained improvement in the Ion/Ioff ratio and reduction in DIBL and Subthreshold Slope