A novel structure of Schottky Barrier MOSFET is demonstrated. The devices are designed upon the concept utilizing quantum mechanical tunnelling through the Schottky barrier. An effective and state of art CMOS compatible process flow is used. 50nm N-type and P-type Schottky Barrier MOSFET with two conventional metal silicide are presented and excellent device performance is achieved in comparison with other Schottky Barrier devices. 1
An n-channel planar asymmetric Schottky barrier source/drain MOSFET (ASB), in which the source-side ...
The continuous miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) experi...
The Schottky barrier MOSFET has been proposed recently as an alternative to traditional MOSFET for s...
A novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has b...
A novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has b...
Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices,...
In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/dr...
International audienceThis paper explores how the Schottky barrier (SB) transistor is used in a vari...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
As continued MOSFETs scaling becomes increasingly challenging, solutions are urgently needed to meet...
In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSF...
Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candid...
used to analyze the performance of sub-0.1 m Schottky barrier MOSFET’s. In these devices, the source...
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source...
In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect t...
An n-channel planar asymmetric Schottky barrier source/drain MOSFET (ASB), in which the source-side ...
The continuous miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) experi...
The Schottky barrier MOSFET has been proposed recently as an alternative to traditional MOSFET for s...
A novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has b...
A novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has b...
Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices,...
In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/dr...
International audienceThis paper explores how the Schottky barrier (SB) transistor is used in a vari...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
As continued MOSFETs scaling becomes increasingly challenging, solutions are urgently needed to meet...
In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSF...
Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candid...
used to analyze the performance of sub-0.1 m Schottky barrier MOSFET’s. In these devices, the source...
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source...
In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect t...
An n-channel planar asymmetric Schottky barrier source/drain MOSFET (ASB), in which the source-side ...
The continuous miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) experi...
The Schottky barrier MOSFET has been proposed recently as an alternative to traditional MOSFET for s...
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