High leakage current in deep sub-micron regimes is a significant contributor to the power dissipation of CMOS circuits as the CMOS technology scales down. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low power applications.. This paper explores transistor leakage mechanisms and device and circuit techniques to reduce leakage power consumption. For over 30 years CMOS devices have been continuously scaled to achieve higher density, better performance, and lower power consumption. With each technology generation, transistor delay times hav
High leakage current in deep sub-micron regimes is becoming a significant contributor to power dissi...
Scaling of CMOS technology has enabled a phenomenal growth in computing capability throughout the la...
The advantage of scaling devices is to achieve high performance, low power, large integration and lo...
An electronic system/appliance/portable device with high speed, low power, and feasible area has bec...
High leakage current in deep-submicrometer regimes is be-coming a significant contributor to power d...
Most of the portable systems, such as cellular communication devices, and laptop computers operate f...
Power dissipation is a key consideration in the design of nano-scale CMOS VLSI circuits. Various tec...
With the advent of deep-submicron technologies, leakage power dissipation is a major concern for sca...
SummaryWith the advent of deep-submicron technologies, leakage power dissipation is a major concern ...
nevertheless the leakage currents are leftover as an adverse effect. The problem has taken a serious...
Minimizations of power dissipation, chip area with higher circuit performance are the necessary and ...
Because of the continued scaling of technology and supply-threshold voltage, leakage power has becom...
AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLS...
Before the CMOS process is scaled into deep sub-micron process, dynamic energy loss has always domin...
Technology scaling has taken circuit performance to unprecedented levels in the deep submicron regim...
High leakage current in deep sub-micron regimes is becoming a significant contributor to power dissi...
Scaling of CMOS technology has enabled a phenomenal growth in computing capability throughout the la...
The advantage of scaling devices is to achieve high performance, low power, large integration and lo...
An electronic system/appliance/portable device with high speed, low power, and feasible area has bec...
High leakage current in deep-submicrometer regimes is be-coming a significant contributor to power d...
Most of the portable systems, such as cellular communication devices, and laptop computers operate f...
Power dissipation is a key consideration in the design of nano-scale CMOS VLSI circuits. Various tec...
With the advent of deep-submicron technologies, leakage power dissipation is a major concern for sca...
SummaryWith the advent of deep-submicron technologies, leakage power dissipation is a major concern ...
nevertheless the leakage currents are leftover as an adverse effect. The problem has taken a serious...
Minimizations of power dissipation, chip area with higher circuit performance are the necessary and ...
Because of the continued scaling of technology and supply-threshold voltage, leakage power has becom...
AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLS...
Before the CMOS process is scaled into deep sub-micron process, dynamic energy loss has always domin...
Technology scaling has taken circuit performance to unprecedented levels in the deep submicron regim...
High leakage current in deep sub-micron regimes is becoming a significant contributor to power dissi...
Scaling of CMOS technology has enabled a phenomenal growth in computing capability throughout the la...
The advantage of scaling devices is to achieve high performance, low power, large integration and lo...