DEVELOPMENT OF BROADBAND LOW-VOLTAGE RF MEM SWITCHES
- S. C. Shen
- D. T. Becher
- D. C. Caruth
- M. Feng
View in ORKG Publication date
February 2015Abstract
We present novel RF switches using micro-electro-mechanical (MEM) technology. These MEM switches are built on GaAs substrates using GaAs MESFET MMIC-compatible processes. The fabricated shunt switches showed an insertion loss of less than 0.2dB and an isolation of greater than 20dB up to 40GHz. The switching speed is 47µS. The broadband MEM switches are promising building blocks for wideband circuits and reconfigurable antenna applications