History effect
- W. Wu A
- X. Li A
- G. Gildenblat A
- G. O. Workman B
- S. Veeraraghavan B
- C. C. Mcandrew C
- R. Van Langevelde D
- G. D. J. Smit E
- A. J. Scholten E
- D. B. M. Klaassen E
- J. Watts F
- Prof S. Cristoloveanu
- Surface Potential
- Tunneling Current
View in ORKG Publication date
January 2008Abstract
Body resistance Harmonic balance a b s t r a c t This paper reports recent progress in partially depleted (PD) SOI MOSFET modeling using a surface poten-tial based approach. The new model is formulated within the framework of the latest industry standard bulk MOSFET model PSP. In addition to its physics-based formulation and scalability inherited from PSP, PSP-SOI captures SOI specific effects by including floating body simulation capability, parasitic body cur-rents and capacitances. A nonlinear body resistance model is included for accurate characterization and simulation of body-contacted SOI devices. The PSP-SOI model has been verified using test data from 90 nm to 65 nm PD/SOI processes. 2008 Elsevier Ltd. All rights reserved