Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.Cataloged from PDF version of thesis.Includes bibliographical references (pages 51-54).Spintronic devices promise to be an energy efficient alternative to complementary metal oxide semiconductor devices for logic and memory. However, in order to be more competitive, further reductions in switching energy and switching speed are needed. Recently, there has been interest in using antiferromagnetically coupled materials instead of ferromagnetic materials to store information. Compared with ferromagnetic materials, antiferromagnetically coupled systems exhibit faster dynamics and are more stable against external magnetic field pe...
Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for ...
Electrical manipulation of magnetization without an external magnetic field is critical for the deve...
The spin-orbit torque switching of ferrimagnetic Gdx(Fe90Co10)100-x films was studied for both trans...
Despite the potential advantages of information storage in antiferromagnetically coupled materials, ...
International audienceWe report a systematic study of current-induced perpendicular magnetization sw...
Spin–orbit torque can be used to manipulate magnetization in spintronic devices. However, convention...
Spin-orbit torques arising from the spin-orbit coupling of non-magnetic heavy metals allow electrica...
Spintronic devices provide an energy-efficient platform for implementing non-volatile memory and log...
Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.We present a compre...
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of wr...
In the field of spintronics, the transport of spin and charge is explored. Within the last decade, s...
Spintronics has rapidly emerged as a highly pursued research area in solid-state physics and devices...
Thesis: Sc. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
Antiferromagnets offer considerable potential for electronic device applications. This article revie...
Antiferromagnets offer considerable potential for electronic device applications. This article revie...
Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for ...
Electrical manipulation of magnetization without an external magnetic field is critical for the deve...
The spin-orbit torque switching of ferrimagnetic Gdx(Fe90Co10)100-x films was studied for both trans...
Despite the potential advantages of information storage in antiferromagnetically coupled materials, ...
International audienceWe report a systematic study of current-induced perpendicular magnetization sw...
Spin–orbit torque can be used to manipulate magnetization in spintronic devices. However, convention...
Spin-orbit torques arising from the spin-orbit coupling of non-magnetic heavy metals allow electrica...
Spintronic devices provide an energy-efficient platform for implementing non-volatile memory and log...
Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.We present a compre...
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of wr...
In the field of spintronics, the transport of spin and charge is explored. Within the last decade, s...
Spintronics has rapidly emerged as a highly pursued research area in solid-state physics and devices...
Thesis: Sc. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
Antiferromagnets offer considerable potential for electronic device applications. This article revie...
Antiferromagnets offer considerable potential for electronic device applications. This article revie...
Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for ...
Electrical manipulation of magnetization without an external magnetic field is critical for the deve...
The spin-orbit torque switching of ferrimagnetic Gdx(Fe90Co10)100-x films was studied for both trans...