Production of oriented nitrogen-vacancy color centers in synthetic diamond
- Edmonds, A. M.
- D’Haenens-Johansson, U. F. S.
- Cruddace, R. J.
- Newton, Mark E.
- Fu, K.-M. C.
- Santori, C.
- Beausoleil, R. G.
- Twitchen, D. J.
- Markham, M. L.
DOIAbstract
The negatively charged nitrogen-vacancy (NV−) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically <0.5%) incorporated during homoepitaxial diamond growth by chemical vapor deposition (CVD) is in the form of undecorated NV− centers. Furthermore, studies on CVD diamond grown on (110)-oriented substrates show a near 100% preferential orientation of NV centers along only the [111] and [1̅ 1̅ 1] directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the ...
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