Add to ORKGIn this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained
In this paper we report on our progress with SiGe gate-normal / line tunneling FETs, highlighting re...
With voltage scaling to reduce power consumption in scaled transistors the subthreshold swing is bec...
The use of interband tunneling to obtain steep subthreshold transistors at less than 0.5 V is descri...
In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of S...
In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthresho...
The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthre...
This paper presents a Tunneling Field Effect Transistor concept with a vertical SiGe/Si hetero tunne...
Tunnel field-effect transistors (TFETs) with a steep subthreshold-slope (SS) are promising low-power...
As the physical dimensions of the MOSFET have been scaling, the supply voltage has not scaled accord...
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is bas...
This paper provides an experimental proof that both the ON-current ION and the subthreshold swing SS...
Scaling of nanoelectronics consequently comes along with power consumption in integrated circuits, e...
Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building bl...
In this letter, a novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and optimized f...
Using an atomistic full-band quantum transport solver, we investigate the performances of vertical b...
In this paper we report on our progress with SiGe gate-normal / line tunneling FETs, highlighting re...
With voltage scaling to reduce power consumption in scaled transistors the subthreshold swing is bec...
The use of interband tunneling to obtain steep subthreshold transistors at less than 0.5 V is descri...
In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of S...
In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthresho...
The benefits of a gate-normal tunneling architecture in enhancing the on-current and average subthre...
This paper presents a Tunneling Field Effect Transistor concept with a vertical SiGe/Si hetero tunne...
Tunnel field-effect transistors (TFETs) with a steep subthreshold-slope (SS) are promising low-power...
As the physical dimensions of the MOSFET have been scaling, the supply voltage has not scaled accord...
The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is bas...
This paper provides an experimental proof that both the ON-current ION and the subthreshold swing SS...
Scaling of nanoelectronics consequently comes along with power consumption in integrated circuits, e...
Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building bl...
In this letter, a novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and optimized f...
Using an atomistic full-band quantum transport solver, we investigate the performances of vertical b...
In this paper we report on our progress with SiGe gate-normal / line tunneling FETs, highlighting re...
With voltage scaling to reduce power consumption in scaled transistors the subthreshold swing is bec...
The use of interband tunneling to obtain steep subthreshold transistors at less than 0.5 V is descri...