In-plane hole g factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional Bþk4 −σþ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term B−k2 −σþ considered until now
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad a...
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-de...
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the ...
Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-or...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, wh...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
A recent study of a high-mobility two-dimensional hole gas in a strained Ge quantum well revealed st...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad a...
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-de...
Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the ...
Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-or...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, wh...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
A recent study of a high-mobility two-dimensional hole gas in a strained Ge quantum well revealed st...
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual p...
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad a...
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-de...