In this communication, we report the successful growth of high-quality Aurivillius oxide thin films with m = 8 (where m denotes the number of pseudo-perovskite blocks) using pulsed laser deposition. Both the ferroelectric and magnetic properties of the layer-structure epitaxial Bi9Ti3Fe5O27 films were investigated. Surprisingly, the optimized thin films exhibit in-plane ferroelectric polarization switching and ferromagnetism even at room temperature, though the bulk material is antiferromagnetic. In addition, dielectric measurements indicate that such thin films exhibit potential for high-frequency device applications. This work therefore demonstrates a new pathway to developing single-phase multiferroic materials where ferroelectricity and...
Efforts for the integration of ferroelectric materials in nonvolatile, low energy consuming memories...
This chapter reviews approaches currently under investigation for the fabrication of single‐phase ma...
The textured multilayer (ML) thin films of bismuth layered ferroelectric (FE) compounds, Bi2VO5.5 (B...
In this communication, we report the successful growth of high-quality Aurivillius oxide thin films ...
Aurivillius Bim+1Ti3Fem−3O3m+3 (m = 4, 5, 6) thin films have been deposited by a pulsed laser deposi...
Aurivillius phase Bi 5Ti 3Fe 0.7Co 0.3O 15 (BTF7C3O) thin films on α-quartz substrates were fabricat...
Single-phase multiferroic materials are of considerable interest for future memory and sensing appli...
Multiferroics, defined as materials with coexistence of at least two of the electric, elastic, and m...
The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-dope...
The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-dope...
Naturally super-latticed Aurivillius phase ferroelectrics can accommodate various magnetic ions, ope...
Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electri...
The ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivill...
Aurivillius phase thin films of Bi5Ti3(FexMn1−x)O15 with x = 1 (Bi5Ti3FeO15) and 0.7 (Bi5Ti3Fe0.7Mn0...
The celebrated renaissance of the multiferroics family over the past ten years has also been that of...
Efforts for the integration of ferroelectric materials in nonvolatile, low energy consuming memories...
This chapter reviews approaches currently under investigation for the fabrication of single‐phase ma...
The textured multilayer (ML) thin films of bismuth layered ferroelectric (FE) compounds, Bi2VO5.5 (B...
In this communication, we report the successful growth of high-quality Aurivillius oxide thin films ...
Aurivillius Bim+1Ti3Fem−3O3m+3 (m = 4, 5, 6) thin films have been deposited by a pulsed laser deposi...
Aurivillius phase Bi 5Ti 3Fe 0.7Co 0.3O 15 (BTF7C3O) thin films on α-quartz substrates were fabricat...
Single-phase multiferroic materials are of considerable interest for future memory and sensing appli...
Multiferroics, defined as materials with coexistence of at least two of the electric, elastic, and m...
The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-dope...
The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-dope...
Naturally super-latticed Aurivillius phase ferroelectrics can accommodate various magnetic ions, ope...
Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electri...
The ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivill...
Aurivillius phase thin films of Bi5Ti3(FexMn1−x)O15 with x = 1 (Bi5Ti3FeO15) and 0.7 (Bi5Ti3Fe0.7Mn0...
The celebrated renaissance of the multiferroics family over the past ten years has also been that of...
Efforts for the integration of ferroelectric materials in nonvolatile, low energy consuming memories...
This chapter reviews approaches currently under investigation for the fabrication of single‐phase ma...
The textured multilayer (ML) thin films of bismuth layered ferroelectric (FE) compounds, Bi2VO5.5 (B...