This thesis is concerned with calculations of the Auger recombination rate in direct gap semiconductors', it is composed of two parts: in the first and major part, the calculation of the CHCC Auger recombination process in a model of a quantum well heterostructure is considered; and in the second part, the overlap integrals between the cell periodic parts of the conduction band and heavy hole band Bloch functions are calculated using a 15-band full zone empirical K.p method. These overlap integrals are important factors in determining the Auger rate involving the recombination of electrons with heavy holes. The calculation of the quantum well CHCC Auger recombination rate differs from the bulk CHCC Auger calculations bec...
We investigate theoretically the influence of type and density of background carriers in the active ...
The new Auger-recombination mechanism of the unequilibrium carriers in the semiconductor quantum str...
Influence of electron-electron relaxation processes on Auger recombination rate in direct band semic...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterost...
Recent experimental investigations on the reduction of internal quantum efficiency with increasing c...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has be...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
SIGLEAvailable from British Library Lending Division - LD:D57237/85 / BLDSC - British Library Docume...
A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum we...
ABSTRACT: Auger recombination is a significant loss mechanism in many optoelectronic devices. We use...
The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate...
We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum ...
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2...
We investigate theoretically the influence of type and density of background carriers in the active ...
The new Auger-recombination mechanism of the unequilibrium carriers in the semiconductor quantum str...
Influence of electron-electron relaxation processes on Auger recombination rate in direct band semic...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterost...
Recent experimental investigations on the reduction of internal quantum efficiency with increasing c...
We present a theoretical study of Auger recombination processes in a GaInNAs/GaAs quantum well struc...
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has be...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
SIGLEAvailable from British Library Lending Division - LD:D57237/85 / BLDSC - British Library Docume...
A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum we...
ABSTRACT: Auger recombination is a significant loss mechanism in many optoelectronic devices. We use...
The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate...
We have experimentally studied the interband photoluminescence spectra of InGaAsSb/AlGaAsSb quantum ...
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2...
We investigate theoretically the influence of type and density of background carriers in the active ...
The new Auger-recombination mechanism of the unequilibrium carriers in the semiconductor quantum str...
Influence of electron-electron relaxation processes on Auger recombination rate in direct band semic...