The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm2. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration
High temperature electronics, micro-electro-mechanical systems (MEMS) and sensors that are able to o...
The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature range from T=...
© (2011) Trans Tech Publications, Switzerland.4H-SiC Schottky Barrier Diodes (SBDs) with remarkable ...
For the first time, we report on the performances of 4H-SiC pin-diode temperature sensors for operat...
For the first time, we report on the performances of 4H-SiC p-i-n-diode temperature sensors for oper...
The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, el...
In this paper, a highly sensitive linear high-temperature sensor based on a 4H-SiC p-i-n diode is in...
A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The line...
The linear dependence on temperature of the voltage drop VD across a forward-biased 4H-SiC p-i-n dio...
In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyon...
In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyon...
There is a rising demand for harsh-environment integrated circuits and sensors for a wide variety of...
Abstract The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both de...
High temperature electronics, micro-electro-mechanical systems (MEMS) and sensors that are able to o...
The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature range from T=...
© (2011) Trans Tech Publications, Switzerland.4H-SiC Schottky Barrier Diodes (SBDs) with remarkable ...
For the first time, we report on the performances of 4H-SiC pin-diode temperature sensors for operat...
For the first time, we report on the performances of 4H-SiC p-i-n-diode temperature sensors for oper...
The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, el...
In this paper, a highly sensitive linear high-temperature sensor based on a 4H-SiC p-i-n diode is in...
A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is presented. The line...
The linear dependence on temperature of the voltage drop VD across a forward-biased 4H-SiC p-i-n dio...
In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyon...
In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyon...
There is a rising demand for harsh-environment integrated circuits and sensors for a wide variety of...
Abstract The performance of two temperature sensors based on 4H-SiC diodes are investigated. Both de...
High temperature electronics, micro-electro-mechanical systems (MEMS) and sensors that are able to o...
The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature range from T=...
© (2011) Trans Tech Publications, Switzerland.4H-SiC Schottky Barrier Diodes (SBDs) with remarkable ...