The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. The temperature dependences of the attenuation of all normal ultrasonic modes propagating in the 〈110〉 direction both in doped copper and in nominally pure gallium arsenide crystals have been measured. In the GaAs:Cu crystal, the attenuation peak has been revealed for a transverse wave polarized along the 〈110〉 axis whose elastic shifts correspond to the symmetry of the tetragonal mode of the Jahn-Teller effect. The temperature dependence of the attenuation of this wave indicates that two types of attenuation-relaxation and resonance-occur. The constructed temperature dependence of the relaxation time indicates that tunneling through the potent...
Fine structure, level splitting, and relaxation times of the acceptor ground state in cubic semicond...
The attenuation of 720 MHz transverse acoustic waves has been studied in the metallic glass Pd0.775S...
Irradiation of GaAs with 2.25-2.5 MeV electrons at temperatures below 190 K produces two peaks in ul...
The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. Th...
Transition-metal-doped semiconductor GaAs crystals are used as model systems for spintronic research...
The contribution of the Jahn-Teller effect to absorption of an ultrasonic wave by a GaAs crystal dop...
The influence of plastic deformation (O<ε <10%) on the MHz-ultrasonic attenuation α in single crysta...
Temperature dependences of phase velocity and absorption of ultrasound were investigated in ZnSe cry...
We show that the structure, properties, and concentration of vacancies in crystals can be studied by...
The temperature dependence of the absorption and velocity of transverse ultrasonic waves propagating...
Low-temperature anomalies in absorption of the fast transverse and longitudinal ultrasonic waves are...
We have measured the phonon-electron attenuation αPE (10) in Cu single crystals of widely different ...
The temperature dependence of ultrasonic attenuation is proposed to use for determining concentratio...
We have simultaneously measured the frequency dependence (10 to 90 MHz) of the ultrasonic attenuatio...
It is investigated how the nuclear degrees of freedom of the tunneling system (TS) inherent in an am...
Fine structure, level splitting, and relaxation times of the acceptor ground state in cubic semicond...
The attenuation of 720 MHz transverse acoustic waves has been studied in the metallic glass Pd0.775S...
Irradiation of GaAs with 2.25-2.5 MeV electrons at temperatures below 190 K produces two peaks in ul...
The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. Th...
Transition-metal-doped semiconductor GaAs crystals are used as model systems for spintronic research...
The contribution of the Jahn-Teller effect to absorption of an ultrasonic wave by a GaAs crystal dop...
The influence of plastic deformation (O<ε <10%) on the MHz-ultrasonic attenuation α in single crysta...
Temperature dependences of phase velocity and absorption of ultrasound were investigated in ZnSe cry...
We show that the structure, properties, and concentration of vacancies in crystals can be studied by...
The temperature dependence of the absorption and velocity of transverse ultrasonic waves propagating...
Low-temperature anomalies in absorption of the fast transverse and longitudinal ultrasonic waves are...
We have measured the phonon-electron attenuation αPE (10) in Cu single crystals of widely different ...
The temperature dependence of ultrasonic attenuation is proposed to use for determining concentratio...
We have simultaneously measured the frequency dependence (10 to 90 MHz) of the ultrasonic attenuatio...
It is investigated how the nuclear degrees of freedom of the tunneling system (TS) inherent in an am...
Fine structure, level splitting, and relaxation times of the acceptor ground state in cubic semicond...
The attenuation of 720 MHz transverse acoustic waves has been studied in the metallic glass Pd0.775S...
Irradiation of GaAs with 2.25-2.5 MeV electrons at temperatures below 190 K produces two peaks in ul...