The results of an experimental study of the magnetoconductivity of two-dimensional (2D) electron gas caused by suppression of the interference quantum correction in a HgTe single quantum well heterostructure with an inverted energy spectrum are presented. It is shown that only the antilocalization magnetoconductivity is observed at relatively high conductivity, σ(20 - 30)G 0, where G 0=e2/2π2. The antilocalization correction demonstrates a crossover from 0. 5ln(τ φ/τ) to 1.0ln(τ φ/τ) behavior with increasing conductivity (here τ φ and τ are the phase relaxation and transport relaxation times, respectively). It is interpreted as a result of crossover to the regime when the two chiral branches of the electron energy spectrum independently con...
The results on the measurement of electrical conductivity and magnetoconductivity of a GaAs double q...
We present the observation of weak antilocalization due to the Rashba spin–orbit interaction, throug...
The magnetoresistance associated with quantum interference corrections in a high mobility, gated Inx...
The results of experimental study of interference induced magnetoconductivity in narrow quantum well...
The results of experimental study of quantum interference effects in small magnetic fields in narrow...
The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 n...
The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 n...
Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the m...
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in an inversion layer on a p-type ...
In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the ...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
\u3cp\u3eIn this study we have measured the magnetoresistance response of inverted HgTe quantum well...
Weak localization corrections to conductivity of a two-dimensional electron gas are studied by measu...
The results of an experimental study of the magnetoresistivity and the Hall and Shubnikov-de Haas ef...
The results on the measurement of electrical conductivity and magnetoconductivity of a GaAs double q...
We present the observation of weak antilocalization due to the Rashba spin–orbit interaction, throug...
The magnetoresistance associated with quantum interference corrections in a high mobility, gated Inx...
The results of experimental study of interference induced magnetoconductivity in narrow quantum well...
The results of experimental study of quantum interference effects in small magnetic fields in narrow...
The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 n...
The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 n...
Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the m...
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in an inversion layer on a p-type ...
In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the ...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
HgTe quantum wells (QWs) are two-dimensional semiconductor systems that change their properties at t...
\u3cp\u3eIn this study we have measured the magnetoresistance response of inverted HgTe quantum well...
Weak localization corrections to conductivity of a two-dimensional electron gas are studied by measu...
The results of an experimental study of the magnetoresistivity and the Hall and Shubnikov-de Haas ef...
The results on the measurement of electrical conductivity and magnetoconductivity of a GaAs double q...
We present the observation of weak antilocalization due to the Rashba spin–orbit interaction, throug...
The magnetoresistance associated with quantum interference corrections in a high mobility, gated Inx...