The contribution of the Jahn-Teller effect to absorption of an ultrasonic wave by a GaAs crystal doped with copper has been investigated theoretically. The distinguishing feature of the problem under consideration is the existence of two holes in the state of the complex valence band. The magnitude of the tunneling splitting in Jahn-Teller centers has been determined. The theoretical values of the absorption coefficients for the resonant and relaxation types of absorption have been obtained. The magnitudes of these coefficients have been estimated. © 2012 Pleiades Publishing, Ltd
Coupling of acoustical and optical modes is introduced to interpret zero-phonon lines in extended ab...
We have developed a theory of intensity-dependent ultrasonic relaxational absorption in amorphous me...
The attenuation of long-wavelength phonons due to their interaction with electronic excitations in d...
The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. Th...
The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. Th...
Transition-metal-doped semiconductor GaAs crystals are used as model systems for spintronic research...
The temperature dependence of the absorption and velocity of transverse ultrasonic waves propagating...
Low-temperature anomalies in absorption of the fast transverse and longitudinal ultrasonic waves are...
We show that the structure, properties, and concentration of vacancies in crystals can be studied by...
The work covers problems of investigation of optical and nonradiative processes in anisotropic semic...
Temperature dependences of phase velocity and absorption of ultrasound were investigated in ZnSe cry...
Fine structure, level splitting, and relaxation times of the acceptor ground state in cubic semicond...
The temperature dependence of ultrasonic attenuation is proposed to use for determining concentratio...
We explain the unexpected behaviour of the ultrasonic absorption observed in the amorphous supercond...
International audienceWe present the acoustic analog of resonant tunneling through a double barrier ...
Coupling of acoustical and optical modes is introduced to interpret zero-phonon lines in extended ab...
We have developed a theory of intensity-dependent ultrasonic relaxational absorption in amorphous me...
The attenuation of long-wavelength phonons due to their interaction with electronic excitations in d...
The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. Th...
The interaction of ultrasound with Cu Ga4As in a GaAs:Cu crystal has been experimentally studied. Th...
Transition-metal-doped semiconductor GaAs crystals are used as model systems for spintronic research...
The temperature dependence of the absorption and velocity of transverse ultrasonic waves propagating...
Low-temperature anomalies in absorption of the fast transverse and longitudinal ultrasonic waves are...
We show that the structure, properties, and concentration of vacancies in crystals can be studied by...
The work covers problems of investigation of optical and nonradiative processes in anisotropic semic...
Temperature dependences of phase velocity and absorption of ultrasound were investigated in ZnSe cry...
Fine structure, level splitting, and relaxation times of the acceptor ground state in cubic semicond...
The temperature dependence of ultrasonic attenuation is proposed to use for determining concentratio...
We explain the unexpected behaviour of the ultrasonic absorption observed in the amorphous supercond...
International audienceWe present the acoustic analog of resonant tunneling through a double barrier ...
Coupling of acoustical and optical modes is introduced to interpret zero-phonon lines in extended ab...
We have developed a theory of intensity-dependent ultrasonic relaxational absorption in amorphous me...
The attenuation of long-wavelength phonons due to their interaction with electronic excitations in d...