The low-temperature photoluminescence (PL) of xPbO · (1 - x)SiO 2 glasses (x = 0.20-0.75) was studied at = 10 K. The recorded PL-spectra are a superposition of three spectral components with maxima located at 1.8 eV (identified as Pb 6p → metal-bridging O2p radiative electron transition, the "R"-band), 2.0 eV (Pb 6p → non-bridging O2p, the "O"-band) and 2.55 eV (Pb 6p → Pb 6s, the "B"-band), respectively. It was found the essential link for "R", "O" and "B" PL-bands with chemical composition x of the glasses under study. These concentration dependences are expressed as mutual PL-intensity variations for each recorded luminescence band that allowed to determine their origin. The shape of established dependences well coincides with numerical ...
Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-78-C-002...
Reaction order in Bi-doped oxide glasses depends on the opticalbasicity of the glass host. Red and N...
Contains a summary of research.Joint Services Electronics Program (Contract DAAB07-76-C-1400
The temperature quenching of intrinsic luminescence of a lead silicate glass of the 20PbO · 80SiO2 c...
High resolution x-ray photoelectron spectroscopy, (HRXPS) has been used to obtain binding energy, in...
The photoluminescence (PL) activity of oxygen deficient centers in commercial silica samples has bee...
The photoluminescence (PL) activity of oxygen deficient centers in commercial silica samples has bee...
The photo luminescence properties of porous silica at low temperature (8 K) are investigated as a fu...
The photo luminescence properties of porous silica at low temperature (8 K) are investigated as a fu...
Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-78-C-002...
We present evidence connecting the phenomena of carrier type reversal and photoluminescence (PL), wh...
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV...
Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and ...
Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and ...
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV...
Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-78-C-002...
Reaction order in Bi-doped oxide glasses depends on the opticalbasicity of the glass host. Red and N...
Contains a summary of research.Joint Services Electronics Program (Contract DAAB07-76-C-1400
The temperature quenching of intrinsic luminescence of a lead silicate glass of the 20PbO · 80SiO2 c...
High resolution x-ray photoelectron spectroscopy, (HRXPS) has been used to obtain binding energy, in...
The photoluminescence (PL) activity of oxygen deficient centers in commercial silica samples has bee...
The photoluminescence (PL) activity of oxygen deficient centers in commercial silica samples has bee...
The photo luminescence properties of porous silica at low temperature (8 K) are investigated as a fu...
The photo luminescence properties of porous silica at low temperature (8 K) are investigated as a fu...
Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-78-C-002...
We present evidence connecting the phenomena of carrier type reversal and photoluminescence (PL), wh...
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV...
Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and ...
Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and ...
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV...
Contains report on one research project.Joint Services Electronics Program (Contract DAAG29-78-C-002...
Reaction order in Bi-doped oxide glasses depends on the opticalbasicity of the glass host. Red and N...
Contains a summary of research.Joint Services Electronics Program (Contract DAAB07-76-C-1400