A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. XRD and ?-Raman measurements show that the compressive strain in the GeSn thin film is effectively relaxed, and furthermore, unexpected tensile strain was introduced in the suspended GeSn
The photoluminescence of tensile strain germanium nanostructures has been studied. Stress is applied...
Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, th...
This letter presents the epitaxial growth and characterization of a heterostructure for an electrica...
A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. ...
A suspended GeSn microstructure is realized by a two-step selective wet etching technique with the a...
Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into m...
We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn lay...
We present our recent researches on novel group IV nano- and micro-structures for potential light so...
International audienceThe structural properties of CVD-grown (Si)GeSn heterostructures were assessed...
GeSn materials have attracted considerable attention for their tunable band structures and high carr...
The application of strain into GeSn alloys can effectively modulate the band structures, thus creati...
This paper reports on the growth and characterization of highly compressive strained GeSn layers on ...
The possibility to produce virtual Silicon–Germanium–Tin, (Si)GeSn, substrates for growing strained ...
The introduction of strain in semiconductors is a well-known technique exploited in microelectronics...
The influence of the thermomechanical effects on the optical properties of germanium microstructures...
The photoluminescence of tensile strain germanium nanostructures has been studied. Stress is applied...
Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, th...
This letter presents the epitaxial growth and characterization of a heterostructure for an electrica...
A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. ...
A suspended GeSn microstructure is realized by a two-step selective wet etching technique with the a...
Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into m...
We demonstrate single crystalline GeSn with tensile strain on silicon substrates. Amorphous GeSn lay...
We present our recent researches on novel group IV nano- and micro-structures for potential light so...
International audienceThe structural properties of CVD-grown (Si)GeSn heterostructures were assessed...
GeSn materials have attracted considerable attention for their tunable band structures and high carr...
The application of strain into GeSn alloys can effectively modulate the band structures, thus creati...
This paper reports on the growth and characterization of highly compressive strained GeSn layers on ...
The possibility to produce virtual Silicon–Germanium–Tin, (Si)GeSn, substrates for growing strained ...
The introduction of strain in semiconductors is a well-known technique exploited in microelectronics...
The influence of the thermomechanical effects on the optical properties of germanium microstructures...
The photoluminescence of tensile strain germanium nanostructures has been studied. Stress is applied...
Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, th...
This letter presents the epitaxial growth and characterization of a heterostructure for an electrica...
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