Evaluation of 35nm MOSFET capacitance components in PSP compact model
- Dideban, D.
- Cheng, B.
- Moezi, N.
- Wang, X.
- Asenov, A.
Publication date
January 2010
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this paper the capacitance components of the PSP compact model which is selected as successor of BSIM4 by the Compact Modelling Council (CMC) are investigated and simulated in HSPICE for the state of the art 35nm MOSFET device. The simulations are compared with TCAD results in both transcapacitance components between the device terminals and time domain to show the impact of accuracy of compact model on real circuit simulations
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