Room-temperature operation of discrete-mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at <sup>λ=3.3µ</sup>m
- Phelan, R.
- Slight, T.
- Kelly, B.
- O'Carroll, J.
- McKee, A.
- Revin, D.
- Zhang, S.
- Krysa, A.
- Kennedy, K.
- Cockburn, J.
- Ironside, C.
- Meredith, W.
- O'Gorman, J.
Publication date
January 2010
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-μ m-wide ridge waveguide and 3000-μm-long cavity, the laser had a threshold current density J<sub>th</sub> of 4.2 kA·cm<sup>-2</sup> (I<sub>th</sub>=1.5 A) at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 μ m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K <; T <; 303 K
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