Residual lifetime estimation has gained a key point among the techniques that improve the reliability and the efficiency of power converters. The main cause of failures are the junction temperature cycles exhibited by switching devices during their normal operation; therefore, reliable power converter lifetime estimation requires the knowledge of the junction temperature time profile. Since on-line dynamic temperature measurements are extremely difficult, in this work an innovative real-time monitoring strategy is proposed, which is capable of estimating the junction temperature profile from the measurement of the dissipated powers through an accurate and compact thermal model of the whole power module. The equations of this model can be ea...
Thermal cycling is one of the main sources of aging and failures in power electronics. A possibility...
This paper presents a novel real-time power-device temperature estimation method that monitors the p...
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in co...
Residual lifetime estimation has gained a key point among the techniques that improve the reliabilit...
Residual lifetime estimation has gained a key point among the techniques that improve the reliabilit...
The lifetime estimation of power converters is a crucial issue for the reliability of electrical gen...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Knowledge of instantaneous junction temperature is essential for effective health management of powe...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
In this paper, a method to predict junction temperature of the solid-state switch under transient co...
This paper presents a real time measurement of on-state forward voltage and estimating the junction ...
The real-time junction temperature monitoring of a high-power insulated-gate bipolar transistor (IGB...
One of the most important causes of the failure of power electronic modules is thermal stress. Prope...
Thermal cycling is one of the main sources of aging and failures in power electronics. A possibility...
This paper presents a novel real-time power-device temperature estimation method that monitors the p...
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in co...
Residual lifetime estimation has gained a key point among the techniques that improve the reliabilit...
Residual lifetime estimation has gained a key point among the techniques that improve the reliabilit...
The lifetime estimation of power converters is a crucial issue for the reliability of electrical gen...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Knowledge of instantaneous junction temperature is essential for effective health management of powe...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
In this paper, a method to predict junction temperature of the solid-state switch under transient co...
This paper presents a real time measurement of on-state forward voltage and estimating the junction ...
The real-time junction temperature monitoring of a high-power insulated-gate bipolar transistor (IGB...
One of the most important causes of the failure of power electronic modules is thermal stress. Prope...
Thermal cycling is one of the main sources of aging and failures in power electronics. A possibility...
This paper presents a novel real-time power-device temperature estimation method that monitors the p...
Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in co...