A wide quantity of SRAM memories are employed along the Large Hadron Collider (LHC), the main CERN accelerator, and they are subjected to high levels of ionizing radiations which compromise the reliability of these devices. The Single Event Effect (SEE) qualification for components to be used in the complex high-energy accelerator at CERN relies on the characterization of two cross sections: 200-MeV protons and thermal neutrons. However, due to cost and time constraints, it is not always possible to characterize the SEE response of components to thermal neutrons, which is often regarded as negligible for components without borophosphosilicate glass (BPSG). Nevertheless, as recent studies show, the sensitivity of deep sub-micron technologies...
Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and t...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage...
The thermal neutron threat to the reliability of electronic devices caused by $^{10}\text{B}$ captu...
In addition to high-energy hadrons, which include neutrons, protons, and pions above 20 MeV, thermal...
Electronic components and systems operating in the Large Hadron Collider (LHC) accelerator at CERN a...
The radiation showers generated by the interaction of high-energy electrons with matter include neut...
International audienceThe approach of calibrating neutron environments through well-known Single Eve...
Neutrons of thermal and high energies can change the value of a bit stored in a Static Random Access...
The Radiation MONitoring (RadMON) system is widely employed at CERN to measure the radiation levels ...
We study the neutron field at the NEAR station of the neutron time-of-flight (n_TOF) facility at CER...
This paper provides an experimental study of the single-event upset (SEU) susceptibility against the...
Single event upset (SEU) is mainly caused by neutrons in the terrestrial environment. In addition, S...
International audienceThe approach of calibrating neutron environments through well-known SEU based ...
In harsh radiation environments, it is well known that the angle of incidence of impinging particles...
This study analyses the response of synchronous dynamic random access memories to neutron irradiatio...
Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and t...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage...
The thermal neutron threat to the reliability of electronic devices caused by $^{10}\text{B}$ captu...
In addition to high-energy hadrons, which include neutrons, protons, and pions above 20 MeV, thermal...
Electronic components and systems operating in the Large Hadron Collider (LHC) accelerator at CERN a...
The radiation showers generated by the interaction of high-energy electrons with matter include neut...
International audienceThe approach of calibrating neutron environments through well-known Single Eve...
Neutrons of thermal and high energies can change the value of a bit stored in a Static Random Access...
The Radiation MONitoring (RadMON) system is widely employed at CERN to measure the radiation levels ...
We study the neutron field at the NEAR station of the neutron time-of-flight (n_TOF) facility at CER...
This paper provides an experimental study of the single-event upset (SEU) susceptibility against the...
Single event upset (SEU) is mainly caused by neutrons in the terrestrial environment. In addition, S...
International audienceThe approach of calibrating neutron environments through well-known SEU based ...
In harsh radiation environments, it is well known that the angle of incidence of impinging particles...
This study analyses the response of synchronous dynamic random access memories to neutron irradiatio...
Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and t...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage...
The thermal neutron threat to the reliability of electronic devices caused by $^{10}\text{B}$ captu...