Methodologies for the Statistical Analysis of Memory Response to Radiation
- Bosser, Alexandre L
- Gupta, Viyas
- Tsiligiannis, Georgios
- Frost, Christopher D
- Zadeh, Ali
- Jaatinen, Jukka
- Javanainen, Arto
- Puchner, Helmut
- Saigne, Frederic
- Virtanen, Ari
- Wrobel, Frederic
- Dilillo, Luigi
Publication date
January 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1]
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