Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
- Gupta, V.
- Bosser, A.
- Tsiligiannis, G.
- Zadeh, A.
- Javanainen, A.
- Virtanen, A.
- Puchner, H.
- Saigne, F.
- Wrobel, F.
- Dilillo, L.
Publication date
January 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions
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