A methodology is proposed for the statistical analysis of memory radiation test data, with the aim of identifying trends in the single-even upset (SEU) distribution. The treated case study is a 65nm SRAM irradiated with neutrons, protons and heavy-ions
Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after fabrication a...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivat...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on st...
This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving ra...
International audienceThis paper addresses a well-known problem that occurs when memories are expose...
International audienceRecently, the occurrence of multiple events in static tests has been investiga...
A simple statistical theory of radiation damage of semiconductor memory has been constructed. The...
28th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)...
Instruments operating in particle accelerators and colliders are exposed to radiations that are comp...
Recently, the occurrence of multiple events in static tests has been investigated by checking the st...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
International audienceAltitude and underground real-time soft error rate (SER) measurements on SRAM ...
Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after fabrication a...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...
Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivat...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on st...
This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving ra...
International audienceThis paper addresses a well-known problem that occurs when memories are expose...
International audienceRecently, the occurrence of multiple events in static tests has been investiga...
A simple statistical theory of radiation damage of semiconductor memory has been constructed. The...
28th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF)...
Instruments operating in particle accelerators and colliders are exposed to radiations that are comp...
Recently, the occurrence of multiple events in static tests has been investigated by checking the st...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
International audienceAltitude and underground real-time soft error rate (SER) measurements on SRAM ...
Single-event upset (SEU) hardness varies across dies, wafers, and lots—even just after fabrication a...
Les particules de l'environnement radiatif naturel sont responsables de dysfonctionnements dans les ...
Electronic systems in space and terrestrial environments are subjected to a flow of particles of nat...