Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω·cm were irradiated with neutrons up to a fluence of 2 × 10(16) n(eq)/cm(2) and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7 × 10(15) n(eq)/cm(2) to decrease to the level of the unirradiated detector after 2 × 10(16) n(eq)/cm(2)