Anisotropic strain relaxation in a-plane GaN quantum dots
- Founta, S.
- Coraux, J.
- Jalabert, D.
- Bougerol, C.
- Rol, F.
- Mariette, H.
- Renevier, H.
- Daudin, B.
- Oliver, R. A.
- Humphreys, C. J.
- Noakes, T. C. Q.
- Bailey, Paul
DOIAbstract
Medium energy ion scattering (MEIS) has been used to measure at the monolayer scale the strain profile of self-organized GaN quantum dots grown on (11–20) or a-plane AlN by molecular-beam epitaxy. By confronting the MEIS results with a structural analysis carried out by atomic force microscopy, it is established that the strain profile is anisotropic, i.e., fully elastic along [1–100] and a combination of plastic and elastic along [0001]. High resolution transmission electron microscopy measurements reveal the presence of misfit dislocations with 1/2 [0001] Burgers vector, consistent with MEIS dat
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