Superconductivity in monolayer tungsten disulfide (2H-WS2) is achieved by strong electrostatic electron doping of an electric double-layer transistor (EDLT). Single crystals of WS2 are grown by a scalable method - chemical vapor deposition (CVD) on standard Si/SiO2 substrate. The monolayers are identified by both AFM and color-coding techniques. The EDLT device based on single-layer WS2 shows ambipolar transfer characteristics indicating a semiconducting nature of the material. Metallic transport on the electron side evolves into superconductivity with critical temperature T-c = 3.15 K
Engineering 2D transition metal dichalcogenides with precise control over layer number enable tuning...
Transition metal dichacogenides represent a unique class of two-dimensional layered materials that c...
Substitutional doping has been proven to be an effective route to engineer band gap, transport chara...
Superconductivity in monolayer tungsten disulfide (2H-WS2) is achieved by strong electrostatic elect...
Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical prope...
We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition....
Two-dimensional (2D) transition metal dichalcogenides (TMDs), equipped with direct bandgaps in the v...
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfolia...
International audienceTungsten disulfide (WS2) monolayers are promising for next-generation flat ele...
Many recent studies show that superconductivity not only exists in atomically thin monolayers but ca...
Tungsten disulfide (WS2) monolayer is a direct band gap semiconductor. The growth of WS2 monolayer h...
Monolayer tungsten disulfide is a very promising two-dimensional material for future transistor tech...
International audienceAtomically thin films of layered materials such as molybdenum disulfide (MoS2)...
Semiconducting transition metal dichalcogenide monolayers (molybdenum disulfide (MoS2) and diselenid...
Transition metal dichalcogenides (TMDs) are a family of materials with different properties ranging ...
Engineering 2D transition metal dichalcogenides with precise control over layer number enable tuning...
Transition metal dichacogenides represent a unique class of two-dimensional layered materials that c...
Substitutional doping has been proven to be an effective route to engineer band gap, transport chara...
Superconductivity in monolayer tungsten disulfide (2H-WS2) is achieved by strong electrostatic elect...
Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical prope...
We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition....
Two-dimensional (2D) transition metal dichalcogenides (TMDs), equipped with direct bandgaps in the v...
We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfolia...
International audienceTungsten disulfide (WS2) monolayers are promising for next-generation flat ele...
Many recent studies show that superconductivity not only exists in atomically thin monolayers but ca...
Tungsten disulfide (WS2) monolayer is a direct band gap semiconductor. The growth of WS2 monolayer h...
Monolayer tungsten disulfide is a very promising two-dimensional material for future transistor tech...
International audienceAtomically thin films of layered materials such as molybdenum disulfide (MoS2)...
Semiconducting transition metal dichalcogenide monolayers (molybdenum disulfide (MoS2) and diselenid...
Transition metal dichalcogenides (TMDs) are a family of materials with different properties ranging ...
Engineering 2D transition metal dichalcogenides with precise control over layer number enable tuning...
Transition metal dichacogenides represent a unique class of two-dimensional layered materials that c...
Substitutional doping has been proven to be an effective route to engineer band gap, transport chara...