Specific Contact Resistance Measurements of Metal Semiconductor-Junctions
- Stavitski, N.
- van Dal, M.J.H.
- Wolters, Robertus A.M.
- Kovalgin, Alexeij Y.
- Schmitz, Jurriaan
Publication date
March 2006
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott's Transmission Line Model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides
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