Comparison of C-V measurement methods for RF-MEMS capacitive switches
- Wang, J.
- Salm, Cora
- Schmitz, Jurriaan
Publication date
March 2013
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages
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