Effects of pressure and inter-electrode distance on deposition of nanocrystalline silicon under high pressure conditions

Liu, Y.
Verkerk, A.D.
Rath, J.K.
Schropp, R.E.I.
Goedheer, W.J.

Publication date

January 2010

Abstract

Pressure (p) and inter-electrode distance (d) are important parameters in the process of depositing hydrogenated nanocrystalline silicon (nc-Si:H) by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD). High quality nc-Si:H materials are normally deposited at high pressure (1 mbar <p <7 mbar). However, systematic research on the combined effects of p and d is rare. In order to optimize nc-Si:H for solar cells, such effects are investigated for a silane-hydrogen discharge at high pressure conditions. All nc-Si:H layers were deposited at fixed hydrogen dilution ratio (H2/SiH4), power and frequency. With optical emission spectroscopy, direct images taken by a photo camera and by 1D SiH4/H2 plasma simulation, three differ...

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Effects of pressure and inter-electrode distance on deposition of nanocrystalline silicon under high pressure conditions

Abstract

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Effects of pressure and inter-electrode distance on deposition of nanocrystalline silicon under high pressure conditions

Abstract

Extracted data

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