This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed
We use the thermochemical model of bond breakage to investigate the degradation occurring in dual la...
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still...
[[abstract]]Leakage current and conduction mechanism of low-dielectric constant (low-k) carbon-doped...
The statistics of the dielectric breakdown of thin films of silicon monoxide and aluminium oxide hav...
A wafer level dielectric breakdown reliability measurement technique using logarithmically stepped-u...
Lai Kam Kwong.Thesis (M.Sc.)--Chinese University of Hong Kong.Bibliography: leaves 86-89
Abstract—The microelectronics industry owes its considerable success largely to the existence of the...
This chapter updates Chapter 6 of Volume 1 and reviews the testing methods used for characterizing t...
The ramped-field technique has been widely used for determining dielectric breakdown in thin insulat...
Four different types of ultra-thin oxide MOS structures have been analyzed to investigate the dielec...
As3H complex dissociates into As2 and AsH complexes. The AsH complex immediately breaks into W and A...
We have compared the thermal damage in ultrathin gate SiO2 layers of 5.6 and 3 nm thickness after in...
Graduation date: 1988The major goal of this research work was to develop better\ud electrical measur...
Very thin films of silicon dioxide grown in aconventional dry oxidation process often suffer from po...
90 p.The purpose of this project is to study the gate oxide breakdown in ultra-thin pMOSFETs using c...
We use the thermochemical model of bond breakage to investigate the degradation occurring in dual la...
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still...
[[abstract]]Leakage current and conduction mechanism of low-dielectric constant (low-k) carbon-doped...
The statistics of the dielectric breakdown of thin films of silicon monoxide and aluminium oxide hav...
A wafer level dielectric breakdown reliability measurement technique using logarithmically stepped-u...
Lai Kam Kwong.Thesis (M.Sc.)--Chinese University of Hong Kong.Bibliography: leaves 86-89
Abstract—The microelectronics industry owes its considerable success largely to the existence of the...
This chapter updates Chapter 6 of Volume 1 and reviews the testing methods used for characterizing t...
The ramped-field technique has been widely used for determining dielectric breakdown in thin insulat...
Four different types of ultra-thin oxide MOS structures have been analyzed to investigate the dielec...
As3H complex dissociates into As2 and AsH complexes. The AsH complex immediately breaks into W and A...
We have compared the thermal damage in ultrathin gate SiO2 layers of 5.6 and 3 nm thickness after in...
Graduation date: 1988The major goal of this research work was to develop better\ud electrical measur...
Very thin films of silicon dioxide grown in aconventional dry oxidation process often suffer from po...
90 p.The purpose of this project is to study the gate oxide breakdown in ultra-thin pMOSFETs using c...
We use the thermochemical model of bond breakage to investigate the degradation occurring in dual la...
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still...
[[abstract]]Leakage current and conduction mechanism of low-dielectric constant (low-k) carbon-doped...