The quantum Hall effect and the structure of magnetoresistance oscillations observed in multilayer p-Ge/Ge1-xSix heterostructure systems are analyzed on the basis of a picture of magnetic levels of the Ge valence band calculated from the model of an infinitely deep square quantum well. The odd numbers of the plateaus in the quantum Hall effect in weak magnetic fields and several features of the magnetoresistance oscillations are explained in terms of an involvement of a second subband of a spatial quantization of heavy holes in samples with relatively wide conducting layers and also in terms of a crossing of subband levels
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Magnetotransport characteristics of dilute two-dimensional hole gases (2DHGs) in Si/SiGe heterostruc...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
Magnetotransport characteristics of a two-dimensional hole gas located at a Si/SiGe heterojunction a...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
We examine the magnetic-field-driven insulator-quantum-Hall-insulator transitions of the two-dimensi...
Magneto-transport measurements of the 2D hole system (2DHS) in p-type Si-Si1-xGex heterostructures i...
We experimentally study the phase diagram of the integer quantized Hall effect, as a function of den...
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an...
Experimental researches of quantum transport properties of semiconductor two-dimensional electron sy...
We present the latest results of our transport measurements, in the quantum Hall (QH) regime, in two...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Magnetotransport characteristics of dilute two-dimensional hole gases (2DHGs) in Si/SiGe heterostruc...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simult...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
Magnetotransport characteristics of a two-dimensional hole gas located at a Si/SiGe heterojunction a...
We report on theoretical and experimental investigations of the integer quantized Hall effect in nar...
We examine the magnetic-field-driven insulator-quantum-Hall-insulator transitions of the two-dimensi...
Magneto-transport measurements of the 2D hole system (2DHS) in p-type Si-Si1-xGex heterostructures i...
We experimentally study the phase diagram of the integer quantized Hall effect, as a function of den...
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an...
Experimental researches of quantum transport properties of semiconductor two-dimensional electron sy...
We present the latest results of our transport measurements, in the quantum Hall (QH) regime, in two...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the o...