Thin epitaxial Pb layers are grown on TiSe2(001). The surface structure was determined with reflection high energy electron diffraction (RHEED) and the coverage was checked with Auger electron spectroscopy (AES). Pb films grow in the (111) orientation epitaxially on TiSe2(001) with Pb[10]∥TiSe2[100]. From Auger measurements, a Stranski-Krastanov growth mechanism is concluded. On Pb deposition of half a monolayer at 200 K, we observed one-dimensional structures at the surface of TiSe2 which are probably formed by accumulated Pb atoms at steps on the substrate. At room temperature, the intercalation of Pb into TiSe2 was monitored with AES. After prolonged annealing at 500 K, epitaxial PbSe crystallites on Pb(111) were observe
Lead has been deposited on the 10-fold surface of decagonal Al72Ni11Co17 at room temperature to form...
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. ...
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. ...
Thin epitaxial Pb layers are grown on TiSe2(001). The surface structure was determined with reflecti...
For this study PbTe and PbSe thin films have been prepared on silicon substrates with native oxide b...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The topography and atomic arrangement on the (100) surface of n- and p-PbSe monocrystals have been s...
Abstract- The deposition process of IV-VI semiconductors is studied in order to determine optimal co...
Accurate Auger intensity measurements as a function of Pb-coverage at room temperature and 100 K sho...
Accurate Auger intensity measurements as a function of Pb-coverage at room temperature and 100 K sho...
The deposition process of IV- VI semiconductors is studied in order to determine optimal conditions ...
The atomic structure and morphology of ultrathin Pb layers deposited on the Ni3Al(1 1 1) face in ult...
Lead has been deposited on the 10-fold surface of decagonal Al72Ni11Co17 at room temperature to form...
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. ...
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. ...
Thin epitaxial Pb layers are grown on TiSe2(001). The surface structure was determined with reflecti...
For this study PbTe and PbSe thin films have been prepared on silicon substrates with native oxide b...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The epitaxial growth of Ag on TiS2(001) is characterized using reflection high-energy electron diffr...
The topography and atomic arrangement on the (100) surface of n- and p-PbSe monocrystals have been s...
Abstract- The deposition process of IV-VI semiconductors is studied in order to determine optimal co...
Accurate Auger intensity measurements as a function of Pb-coverage at room temperature and 100 K sho...
Accurate Auger intensity measurements as a function of Pb-coverage at room temperature and 100 K sho...
The deposition process of IV- VI semiconductors is studied in order to determine optimal conditions ...
The atomic structure and morphology of ultrathin Pb layers deposited on the Ni3Al(1 1 1) face in ult...
Lead has been deposited on the 10-fold surface of decagonal Al72Ni11Co17 at room temperature to form...
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. ...
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. ...