Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Nanoscale electronics based on 2D dopant patterns in silicon

Shen, T. C.
Kline, J. S.
Schenkel, T.
Robinson, S. J.
Ji, J. -Y.
Yang, C. L.
Du, R. R.
Tucker, J. R.

January 2004

A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted cont...

Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography

Abeln, Glenn Charles

81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.The scanning tunneling microsc...

Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography

Abeln, Glenn Charles

January 10000

81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.The scanning tunneling microsc...

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Palasantzas, G
Ilge, B
Rogge, S
Geerlings, LJ

May 1999

We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Palasantzas, G
Ilge, B
Rogge, S
Geerlings, LJ

May 1999

We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Palasantzas, G
Ilge, B
Rogge, S
Geerlings, LJ

May 1999

We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Nijs, J. De,
Ilge, B.,
Palasantzas, G.,
Geerligs, L.J.,

January 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Toward atomic-scale device fabrication in silicon using scanning probe microscope

Frank J. Ruess
Lars Oberbeck
Michelle Y. Simmons
Kuan Eng
J. Goh
Alex R. Hamilton
Toby Hallam
Steven R. Schofield
Neil J. Curson
Robert G. Clark

January 1969

We present a complete fabrication process for the creation of robust nano-and atomic-scale devices i...

Nanoscale STM-patterning and chemical modification of the Si(100) surface

Abeln, G. C.
Shen, T. C.
Tucker, J. R.
Lyding, J. W.

January 1995

Nanoscale patterning of the Si(100)-2x1:H monohydride surface has been achieved using an ultrahigh v...

Atomically controlled device fabrication using STM

Ruess, Frank Joachim, Physics, Faculty of Science, UNSW

January 2006

We present the development of a novel, UHV-compatible device fabrication strategy for the realisatio...

Nanoscale electronics based on 2D dopant patterns in silicon

Shen, T. C.
Kline, J. S.
Schenkel, T.
Robinson, S. J.
Ji, J. -Y.
Yang, C. L.
Du, R. R.
Tucker, J. R.

January 2004

A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted cont...

Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography

Abeln, Glenn Charles

81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.The scanning tunneling microsc...

Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography

Abeln, Glenn Charles

January 10000

81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.The scanning tunneling microsc...

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Palasantzas, G
Ilge, B
Rogge, S
Geerlings, LJ

May 1999

We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Palasantzas, G
Ilge, B
Rogge, S
Geerlings, LJ

May 1999

We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Palasantzas, G
Ilge, B
Rogge, S
Geerlings, LJ

May 1999

We describe two process steps in an STM-based fabrication technology for nanoelectronic devices. Fir...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Nijs, J. De,
Ilge, B.,
Palasantzas, G.,
Geerligs, L.J.,

January 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces

Palasantzas, G.
Ilge, B.
de Nijs, J.
Geerligs, L. J.

February 1999

We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scannin...

Toward atomic-scale device fabrication in silicon using scanning probe microscope

Frank J. Ruess
Lars Oberbeck
Michelle Y. Simmons
Kuan Eng
J. Goh
Alex R. Hamilton
Toby Hallam
Steven R. Schofield
Neil J. Curson
Robert G. Clark

January 1969

We present a complete fabrication process for the creation of robust nano-and atomic-scale devices i...

Nanoscale STM-patterning and chemical modification of the Si(100) surface

Abeln, G. C.
Shen, T. C.
Tucker, J. R.
Lyding, J. W.

January 1995

Nanoscale patterning of the Si(100)-2x1:H monohydride surface has been achieved using an ultrahigh v...

Atomically controlled device fabrication using STM

Ruess, Frank Joachim, Physics, Faculty of Science, UNSW

January 2006

We present the development of a novel, UHV-compatible device fabrication strategy for the realisatio...

Nanoscale electronics based on 2D dopant patterns in silicon

Shen, T. C.
Kline, J. S.
Schenkel, T.
Robinson, S. J.
Ji, J. -Y.
Yang, C. L.
Du, R. R.
Tucker, J. R.

January 2004

A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted cont...

Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography

Abeln, Glenn Charles

81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.The scanning tunneling microsc...

Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography

Abeln, Glenn Charles

January 10000

81 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.The scanning tunneling microsc...

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Abstract

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Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Abstract

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