Low-temperature gaseous nitriding was applied to epitaxial Ni/Fe bilayers deposited onto a MgO(001) substrate. The pore-free nitride layers produced were subsequently oxidized in oxygen. The samples were analyzed by conversion electron Mossbauer spectroscopy (CEMS), x-ray diffraction (XRD), and Rutherford backscattering spectroscopy in combination with channeling techniques. Nitriding in pure NH3 gas at 300 degrees C led to the formation of a textured E-Fe-nitride layer with a predominant composition of Fe2.07N. The epitaxial relationship of the E-Fe-nitride layer with the MgO substrate was found to be epsilon-Fe2.07N{203}(010)//MgO(001)(110). The nitride layer produced was subsequently oxidized in p(O-2) = 100 mbar at 275 degrees C. While ...
Nitriding by low energy high flux processing has been carried out at about 400°C in fcc metal substr...
The oxidation of α-Fe and ε-Fe2N1-z at 573 K and 673 K in O2 at 1 atm was investigated by thermograv...
International audienceFe-O-N films were successfully deposited by magnetron sputtering of an iron ta...
Low-temperature gaseous nitriding was applied to epitaxial Ni/Fe bilayers deposited onto a MgO(001) ...
Iron nitride layers were formed by a novel low-temperature gaseous nitriding process. Nitriding occu...
We present a new method for nitriding iron at low temperatures. First, iron is coated with a thin la...
The Mössbauer spectroscopy of all known Fe nitrides is the topic of this paper. Most of the data wer...
International audienceMultilayered Fe-O-N films were deposited on glass and silicon substrates using...
14 pags., 8 figs., 1 tab.We report the formation of a stable iron nitride thin film following the ex...
Nitridation of sapphire substrates is used as a precursor to the growth of GaN films to provide a we...
This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bila...
Epitaxial layers of iron oxides have been grown on a MgO(001) substrate by evaporating natural Fe or...
Nitridation of sapphire substrates is used as a precursor to the growth of GaN films to provide a we...
The formation of passivating insulators on semiconductor surfaces is an integral part of the current...
In this paper, we study the oxygen effect in low energy nitrogen implanted stainless steel AISI 316 ...
Nitriding by low energy high flux processing has been carried out at about 400°C in fcc metal substr...
The oxidation of α-Fe and ε-Fe2N1-z at 573 K and 673 K in O2 at 1 atm was investigated by thermograv...
International audienceFe-O-N films were successfully deposited by magnetron sputtering of an iron ta...
Low-temperature gaseous nitriding was applied to epitaxial Ni/Fe bilayers deposited onto a MgO(001) ...
Iron nitride layers were formed by a novel low-temperature gaseous nitriding process. Nitriding occu...
We present a new method for nitriding iron at low temperatures. First, iron is coated with a thin la...
The Mössbauer spectroscopy of all known Fe nitrides is the topic of this paper. Most of the data wer...
International audienceMultilayered Fe-O-N films were deposited on glass and silicon substrates using...
14 pags., 8 figs., 1 tab.We report the formation of a stable iron nitride thin film following the ex...
Nitridation of sapphire substrates is used as a precursor to the growth of GaN films to provide a we...
This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bila...
Epitaxial layers of iron oxides have been grown on a MgO(001) substrate by evaporating natural Fe or...
Nitridation of sapphire substrates is used as a precursor to the growth of GaN films to provide a we...
The formation of passivating insulators on semiconductor surfaces is an integral part of the current...
In this paper, we study the oxygen effect in low energy nitrogen implanted stainless steel AISI 316 ...
Nitriding by low energy high flux processing has been carried out at about 400°C in fcc metal substr...
The oxidation of α-Fe and ε-Fe2N1-z at 573 K and 673 K in O2 at 1 atm was investigated by thermograv...
International audienceFe-O-N films were successfully deposited by magnetron sputtering of an iron ta...