Magnetotransport investigation of a GaSb/InAs/GaSb quantum well in pulsed magnetic fields

We report a magnetotransport study of a GaSb clad InAs quantum well in magnetic fields up to 50 T, at temperatures between 4.2 and 1.6 K. In the intermediate field region, the amplitude of the Shubnikov-de Haas oscillations shows an anomalous magnetic field and temperature dependence, which is attributed to the population of a second electron 2D subband, A simulation of the movement of the Fermi level between the Landau levels in the high field region reproduces the magnetic field positions where compensated quantum Hall effect features are observed. At very high magnetic fields, these features are preceded by a complete recombination of intrinsic electrons and holes