The parasitic factors that strongly influence the measurement accuracy of cross-bridge Kelvin resistors have been extensively discussed during the last few decades. The minimum value of specific contact resistance that can be accurately extracted has been estimated. In this paper, we present an analytical model to account for the actual current flow across the contact and propose an area-correction method for a reliable extraction of specific contact resistance. The model is experimentally verified for low-resistivity (close-to-ideal) metal-to-metal contacts. The minimum contact resistance is determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used
The contact resistance between two materials is dependent on the intrinsic properties of the materia...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
Purpose. To determine the contribution of the real contact spots distribution in the total conductiv...
The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resist...
Abstract—The parasitic factors that strongly influence the mea-surement accuracy of Cross-Bridge Kel...
Various test structures have been employed to determine the specific contact resistivity (rhoc) of o...
A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semico...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
Abstract—The Cross-Kelvin Resistor test structure is commonly used for the extraction of the specifi...
The performance of electrical contacts, which are inevitable in the electricity distribution system ...
Modern methods of measuring resistance of ohmic contacts are considered in the review: Cocks-Strack,...
The paper proposes a simple model for contact resistance in the Berger and Kelvin structures which a...
The measurement of the contact resistance (RC) in semiconductor devices relies on the well–establish...
Reeves's CTLM was reviewed and its scope of application to extract specific contact resistance ...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
The contact resistance between two materials is dependent on the intrinsic properties of the materia...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
Purpose. To determine the contribution of the real contact spots distribution in the total conductiv...
The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resist...
Abstract—The parasitic factors that strongly influence the mea-surement accuracy of Cross-Bridge Kel...
Various test structures have been employed to determine the specific contact resistivity (rhoc) of o...
A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semico...
Silicide contacts are used in semiconductor devices because of their relatively low sheet resistance...
Abstract—The Cross-Kelvin Resistor test structure is commonly used for the extraction of the specifi...
The performance of electrical contacts, which are inevitable in the electricity distribution system ...
Modern methods of measuring resistance of ohmic contacts are considered in the review: Cocks-Strack,...
The paper proposes a simple model for contact resistance in the Berger and Kelvin structures which a...
The measurement of the contact resistance (RC) in semiconductor devices relies on the well–establish...
Reeves's CTLM was reviewed and its scope of application to extract specific contact resistance ...
Advancements in nanotechnology have created the need for efficient means of communication of electri...
The contact resistance between two materials is dependent on the intrinsic properties of the materia...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
Purpose. To determine the contribution of the real contact spots distribution in the total conductiv...