A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport effect at room temperature in small magnetic fields. The SVT is a ferromagnet-semiconductor hybrid structure in which hot electrons are injected into a NiFe/Au/Co spin valve, and collected on the other side with energy and momentum selection. This makes the collector current extremely sensitive to spin-dependent scattering. The hot-electron current output of the device changes by more than a factor of three in magnetic fields of only a few Oe, corresponding to a magnetocurrent above 200% at room temperature
High density magnetic recording, magnetic random access memories, displacement and current detection...
The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how...
The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how...
A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport...
Here we present the realization of a room temperature operating spin-valve transistor with huge magn...
A spin-valve transistor showing high sensitivity at low fields was developed. A large magnetocurrent...
Spin-dependent transport of hot electrons across a spin valve has been studied as function of temper...
This thesis discusses research on the hot-electron transport in the spin-valve transistor (SVT). Thi...
The conventional electronics uses the charge property of the electrons and holes. The building block...
The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SV...
A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant m...
Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot ele...
The role of thermal scattering in spin-dependent transport of hot electrons at 0.9 eV is studied usi...
The temperature dependence of magnetocurrent in the spin-valve transistor has been theoretically exp...
An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor....
High density magnetic recording, magnetic random access memories, displacement and current detection...
The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how...
The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how...
A spin-valve transistor (SVT) that employs hot electrons is shown to exhibit a huge magnetotransport...
Here we present the realization of a room temperature operating spin-valve transistor with huge magn...
A spin-valve transistor showing high sensitivity at low fields was developed. A large magnetocurrent...
Spin-dependent transport of hot electrons across a spin valve has been studied as function of temper...
This thesis discusses research on the hot-electron transport in the spin-valve transistor (SVT). Thi...
The conventional electronics uses the charge property of the electrons and holes. The building block...
The effect of the nonmagnetic (NM) spacer on hot-electron transport in the spin-valve transistor (SV...
A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant m...
Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot ele...
The role of thermal scattering in spin-dependent transport of hot electrons at 0.9 eV is studied usi...
The temperature dependence of magnetocurrent in the spin-valve transistor has been theoretically exp...
An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor....
High density magnetic recording, magnetic random access memories, displacement and current detection...
The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how...
The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how...