A classical thermodynamic description of a surface requires the introduction of a number of energetic parameters related to the surface steps. These parameters are the step free energy, the kink creation energy, and the energetic and entropic interactions between steps. This review will demonstrate how a statistical analysis of scanning tunneling microscopy images of stepped surfaces can provide appropriate values of these fundamental energetic parameters. The Si(001) surface is used as a model system. In order to illustrate the significance of these energetic parameters, two morphological surface phase transitions are discussed, namely, the thermal roughening transition and the orientational phase diagram
This paper studies the nonequilibrium energetics of growth steps. It discusses the energy and free e...
The fundamental atomic and electronic behaviour of clean silicon surfaces has been studied within a ...
Atomic steps are common defects at surfaces that can play an important role in many physical phenome...
The roughness of monatomic A- and B-type step edges on 0.5° misoriented Si(001) has been analyzed on...
We have used scanning tunneling microscopy to study Si(113) 0.2° misoriented towards [11-bar0]. Rapi...
We report on measurements of step-step interaction on a flat Si(111)-(7x7) surface and on vicinal Si...
Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a we...
High temperature scanning tunneling microscopy (STM) measurments are performed to study the behavior...
We have investigated the relaxation of single and double layer stepped Si(100) surfaces depending on...
Scanning tunneling microscopy images of vicinal Ge(001) have been analyzed to determine the distribu...
Scanning tunneling microscopy images of 4.5° misoriented double B stepped Si(001) have been analyze...
The morphology of single domain Si(001)2 × 1 surfaces has been investigated with scanning tunneling ...
The well-annealed and quenched Si(I 0 5), (10 4), (10 3), and (3 19) surfaces have been studied with...
The Si(103) surface is studied by means of low-energy electron diffraction and scanning tunneling mi...
We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructe...
This paper studies the nonequilibrium energetics of growth steps. It discusses the energy and free e...
The fundamental atomic and electronic behaviour of clean silicon surfaces has been studied within a ...
Atomic steps are common defects at surfaces that can play an important role in many physical phenome...
The roughness of monatomic A- and B-type step edges on 0.5° misoriented Si(001) has been analyzed on...
We have used scanning tunneling microscopy to study Si(113) 0.2° misoriented towards [11-bar0]. Rapi...
We report on measurements of step-step interaction on a flat Si(111)-(7x7) surface and on vicinal Si...
Although germanium (Ge) (0 0 1) has a relatively small surface unit cell, this surface displays a we...
High temperature scanning tunneling microscopy (STM) measurments are performed to study the behavior...
We have investigated the relaxation of single and double layer stepped Si(100) surfaces depending on...
Scanning tunneling microscopy images of vicinal Ge(001) have been analyzed to determine the distribu...
Scanning tunneling microscopy images of 4.5° misoriented double B stepped Si(001) have been analyze...
The morphology of single domain Si(001)2 × 1 surfaces has been investigated with scanning tunneling ...
The well-annealed and quenched Si(I 0 5), (10 4), (10 3), and (3 19) surfaces have been studied with...
The Si(103) surface is studied by means of low-energy electron diffraction and scanning tunneling mi...
We present a theoretical study of the effects of the STM tip on the geometry of Si(100) reconstructe...
This paper studies the nonequilibrium energetics of growth steps. It discusses the energy and free e...
The fundamental atomic and electronic behaviour of clean silicon surfaces has been studied within a ...
Atomic steps are common defects at surfaces that can play an important role in many physical phenome...