Evaluation of vacuum bonded GaAs/Si spin-valve transistors

In this article a new type of spin-valve transistor, a hybrid GaAs/Si device, is presented. In this device the Si emitter is replaced by a GaAs emitter launcher structure. The integration of the GaAs with the Si was done by means of a room temperature vacuum bonding technique. By using a soft NiFe/Au/Co spin-valve structure as metal base, a 63% change in collector current is obtained at room temperature for a saturation field of 30 Oe. The corresponding in-plane magnetoresistance is only 1%