Magnetic stray fields of Co‐Cr microstrips measured by Lorentz microscopy

te Lintelo, J.G.Th.
Lodder, J.C.
McVitie, S.
Chapman, J.N.

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Publication date

January 1994

DOI

10.1063/1.356166

Publisher

AIP Publishing

Abstract

Magnetic stray fields of Co‐Cr microstrips are investigated for bit stabilization in a vertical Bloch line memory (VBLM). The stray fields were revealed using Lorentz force based Foucault and differential phase contrast (DPC) techniques in a transmission electron microscope. The assumed shape of the stray fields for VBLM use has been experimentally verified. Agreement between experiment and simulation is obtained

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Magnetic stray fields of Co‐Cr microstrips measured by Lorentz microscopy

Abstract

Extracted data

Magnetic stray fields of Co‐Cr microstrips measured by Lorentz microscopy

Abstract

Extracted data

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