High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications
- Myoren, Hiroaki
- Verhoeven, Martin A.J.
- Chen, Jian
- Nakajima, Kensuke
- Yamashita, Tsutomu
- Blank, David H.A.
- Rogalla, Horst
Publication date
January 1998
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions
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