We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surface acoustic waves in InGaAsP waveguide structures grown on InP substrates. Transport is detected by monitoring the photoluminescence in the 1400{1500-nm wavelength range emitted by the recombination of the acoustically transported carriers several hundreds of micrometers away from the photoexcitation spot
The spatial and temporal characteristics of phonon pulses generated in the interband energy relaxati...
Quantum confinement of carriers in semiconductors is at the heart of next generation technologies. W...
Although extensive research on nanostructures has led to the discovery of a number of efficient ways...
We demonstrate the optically detected long-range (>100 µm) ambipolar transport of photogenerated ele...
We have investigated the dynamics of photogenerated carriers in GaAs quantum wires during their tran...
We have investigated the dynamics of the ambipolar transport of photogenerated electrons and holes i...
The ambipolar transport of photogenerated electron-hole pairs by surface acoustic waves (SAWs) in co...
Report for the scientific sojourn carried out at the Paul Drude Institut für Festkörperelektronik of...
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoe...
We employ surface acoustic waves to control the transfer of photo-generated carriers between interco...
The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charg...
Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of ...
We demonstrate the controlled transfer of photoexcited carriers by a surface acoustic wave (SAW) bet...
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoe...
We report on nonadiabatic transport through a double quantum dot under irradiation of surface acoust...
The spatial and temporal characteristics of phonon pulses generated in the interband energy relaxati...
Quantum confinement of carriers in semiconductors is at the heart of next generation technologies. W...
Although extensive research on nanostructures has led to the discovery of a number of efficient ways...
We demonstrate the optically detected long-range (>100 µm) ambipolar transport of photogenerated ele...
We have investigated the dynamics of photogenerated carriers in GaAs quantum wires during their tran...
We have investigated the dynamics of the ambipolar transport of photogenerated electrons and holes i...
The ambipolar transport of photogenerated electron-hole pairs by surface acoustic waves (SAWs) in co...
Report for the scientific sojourn carried out at the Paul Drude Institut für Festkörperelektronik of...
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoe...
We employ surface acoustic waves to control the transfer of photo-generated carriers between interco...
The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charg...
Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of ...
We demonstrate the controlled transfer of photoexcited carriers by a surface acoustic wave (SAW) bet...
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoe...
We report on nonadiabatic transport through a double quantum dot under irradiation of surface acoust...
The spatial and temporal characteristics of phonon pulses generated in the interband energy relaxati...
Quantum confinement of carriers in semiconductors is at the heart of next generation technologies. W...
Although extensive research on nanostructures has led to the discovery of a number of efficient ways...